PRESSURE－INDUCED 4p→4s ELECTRON TRANSFER AND ITS EFFECT ON ELECTRICAL TRANSPORT OF COPPER
来源期刊：中国有色金属学报(英文版)1994年第2期
论文作者：Pu Fengnian
文章页码：82 - 85
Key words：high pressure; copper; electron transfer; electrical resistance
Abstract: On the basis of band theories,the pressure-induced 4p→4s electron transfer of copper andits effect on the densities of states near Fermi level EF in the 4p and 4s bands are discussed. The explanation for the pressure dependence of electrical resistance of copper under compression up to 41GPa is offered.
