γ－TiAl单晶位错滑移特性的研究

来源期刊：中南大学学报(自然科学版)1996年第5期

论文作者：陈小群 黄伯云 贺跃辉 曲选辉

文章页码：44 - 47

关键词：TiAl单晶; 位错亚结构; 滑移特性; 透射电镜

Key words：TiAl single crystal; substructure; slip characteristic; TEM

摘    要：利用透射电子显微术对Ti－56%Al(原子分数)单晶变形亚结构中位错的滑移特性进行了研究.结果表明：γ－TiAl相单晶在室温下,沿[112]方向受力产生的可动位错系为{111}1/2〈112]型超位错,位错滑移方向为〈110]或〈132];位错线轴向处于〈110]或〈132]方向的部分由于受到Peierls应力势的限制而变为难滑移部分,位错继续运动的结果导致在平行于这些方向上形成2条长直的位错对.

Abstract: Slip characteristic of dislocations in a γ TiAl single crystal with the orientation deformed at room temperature was observed by transmission electron microscopy. The results indicated that only super dislocations with 1/2〈112] type Burgers vector can operate. Slip directions of dislocations were 〈110] or 〈132] directions. Parts of dislocation with their axes at right angles to directions 〈110] or 〈132] could be sessile as a result of entrance in. The result of the dislocation continuously moving caused a couple of dislocations lines with straight morphology along the 〈110] or 〈312] direction.