钴氮共掺杂TiO2薄膜的制备及其光电化学性质

来源期刊:中国有色金属学报2007年第9期

论文作者:施晶莹 冷文华 程小芳 张昭 张鉴清 曹楚南

文章页码:1536 - 1536

关键词:TiO2薄膜;钴氮共掺杂;光电化学;可见光

Key words:TiO2 thin film; (Co, N) codoping; photoelectrochemistry; visible light

摘    要:采用溶胶-凝胶法分别制备未掺杂和钴掺杂TiO2溶胶,室温下将其分别与三乙胺反应制得氮掺杂和(Co, N)共掺杂的TiO2溶胶,然后通过浸渍-提拉法在钛片上成膜,经烧结获得掺杂光电极。采用XRD、SEM、XPS和紫外-可见光谱和光电流作用谱等对电极进行表征,并探讨其光电响应机理。结果表明:TiO2共掺杂后并未引起TiO2能带边缘位置发生明显改变,N主要以NOx形式掺杂;(Co, N)共掺杂TiO2薄膜电极的可见光电响应比单掺杂的高,这主要归因于共掺杂TiO2薄膜电极的比表面积增大、光吸收性能改善、界面电荷转移速率提高以及共掺杂元素的协同作用等。

Abstract: The undoped and cobalt doped TiO2 sols were prepared using sol-gel method. After addition of triethylamine into the respective sol at room temperature, nitrogen and (Co, N) codoped TiO2 sols were obtained. Various thin film electrodes were prepared from the sols using dip-coating approach. These films were characterized by XRD, SEM, XPS, UV-Vis absorption spectroscopy and photocurrent action spectra, and their photoelectrochemical response mechanisms under visible light were also discussed. The results show that the (Co, N) codoped TiO2 electrode exhibits an enhanced incident photon to current efficiency under visible light in comparison with the Co-doped and N doped TiO2 alone. Codoping dose not shift the position of energy band edges of the electrodes where nitrogen exists in the form of NOx. The enhanced photoresponse observed can be attributed to the increase in surface area, light absorbance, interface charge transfer rate of photogenerated carriers and cooperation effect between the doping species.

基金信息:国家自然科学基金资助项目
福建省泉州市科技局重点资助项目

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