Microstructure and Ferroelectric Properties of (Bi_0.9Ho_0.1)_3.999Ti_2.997V_0.003O₁₂ Thin Films Prepared by Sol-gel Method for Nonvolatile Memory

Chengju Fu1), Zhixiong Huang1), Jie Li2) and Dongyun Guo1) 1) School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China 2) School of Mechanical Engineering, Chongqing University of Science and Technology, Chongqing 400042, China

摘 要：The （Bi0.9Ho0.1）3.999Ti2.997V0.003O12 （BHTV） films have been prepared on Pt/Ti/SiO2/Si substrates by solgel method. The microstructure and ferroelectric properties of the BHTV films were investigated. The BHTV films show a single phase of Bi-layered Aurivillius structure and dense microstructure. The Ho3+/V5+ cosubstitution can effectively improve the ferroelectric properties. The BHTV film exhibits good ferroelectric properties with 2Pr of 47.6℃/cm2, 2Ec of 265 kV/cm （at applied field of 420 kV/cm）, dielectric constant of 305, dielectric loss of 0.031 （at 1 MHz）, good insulting behavior, as well as the fatigue-free behavior.

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