电场对极性半导体表面（或界面）极化子行为的影响

来源期刊：中南大学学报(自然科学版)1995年第2期

论文作者：杨兵初

文章页码：266 - 270

关键词：极化子; 半导体表面; 基态能量; 有效质量

Key words：polarons; semiconductor surface; ground state energy; effective mass

摘    要：采用电子动量和坐标的线性组合算符方法对电场中的极性半导体表面(或界面)极化子行为进行了研究。当电场较弱时(10⁴V/m以下),表面(或界面)极化子的基态能量和有效质量随电场增加而线性地减小,但其影响甚小,在中等强度的电场下(10⁴～10⁵V/m),电子－声子间的耦合逐渐减弱,电子－电场相互作用逐渐增强,体现在表面(或界面)极化子的基态能量和有效质量更加明显地减小。当电场高于某一极限电场时,电子成为准自由电子。

Abstract: in this paper the behavior of polar semiconductor surface(or interface) polaron in elec-tric field is studied by the linear composed operator of electron mornentum and coordinate. When electric field is weak(10.4V/m lower),the ground state energy and effective mass ofthe surface or interface)polaron are reduced with electric field increasing, and the effect isvery small.When the intensity is middle(between 10.4～10.5 V/m),the coupling of electron-phonon gradully weakens;the coupling of electron-electric field strengthens, and then theground energy and effective mass are quickly cut down.When electric field is higher thansome limit,the electron in semiconductor behaves like free electron.