Low-Temperature Sintering and Microwave DielectricProperties of Ba2Ti3Nb4O18 Ceramics
来源期刊：Journal Of Wuhan University Of Technology Materials Science Edition2011年第5期
论文作者：胡云香
文章页码：847 - 851
摘 要：The effects of CuO and H3BO3 additions on the low-temperature sintering,microstructure,and microwave dielectric properties of Ba2Ti3Nb4O18 ceramics were investigated.The addition of less amount of CuO （< 1 wt%） considerably facilitated the densification of Ba2Ti3Nb4O18 ceramics.Appropriate addition of H3BO3 （< 3.5 wt%） remarkably improved the microwave dielectric properties of ceramics.The addition of H3BO3 and CuO successfully reduced the sintering temperature of Ba2Ti3Nb4O18 ceramics from 1300 to 1050 ℃.Ba2Ti3Nb4O18 ceramics sintered at 1 050 ℃ for 4 h with the addition of 1.0 wt% CuO and 3.5 wt% H3BO3 exhibited good microwave dielectric properties:er=33.74,Q?f=13 812 GHz,and tf=-5.35 ppm/°C at about 5.0 GHz.
胡云香
Department of Electronic Science & Technology,Huazhong University of Science & Technology
摘 要：The effects of CuO and H3BO3 additions on the low-temperature sintering,microstructure,and microwave dielectric properties of Ba2Ti3Nb4O18 ceramics were investigated.The addition of less amount of CuO （< 1 wt%） considerably facilitated the densification of Ba2Ti3Nb4O18 ceramics.Appropriate addition of H3BO3 （< 3.5 wt%） remarkably improved the microwave dielectric properties of ceramics.The addition of H3BO3 and CuO successfully reduced the sintering temperature of Ba2Ti3Nb4O18 ceramics from 1300 to 1050 ℃.Ba2Ti3Nb4O18 ceramics sintered at 1 050 ℃ for 4 h with the addition of 1.0 wt% CuO and 3.5 wt% H3BO3 exhibited good microwave dielectric properties:er=33.74,Q?f=13 812 GHz,and tf=-5.35 ppm/°C at about 5.0 GHz.
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