Rapid fabrication and thermoelectric performance of SnTe via non-equilibrium laser 3D printing
来源期刊:Rare Metals2018年第4期
论文作者:Tian-Le Chen Chuang Luo Yong-Gao Yan Ji-Hui Yang Qing-Jie Zhang Ctirad Uher Xin-Feng Tang
文章页码:300 - 307
摘 要:Thermoelectric technologies based on Seebeck and Peltier effects,as energy techniques able to directly convert heat into electricity and vice versa, hold promise for addressing the global energy and environmental problems. The development of efficient and low-cost thermoelectric modules is the key to their large-scale commercial applications. In this paper, using a non-equilibrium laser3 D printing technique, we focus an attention on the fabrication of mid-temperature p-type SnTe thermoelectric materials. The influence of laser power, scanning speed and layer thickness on the macro-defects, chemical and phase composition, micro structure and thermoelectric performance was systematically investigated. First and foremost,the processing parameter window for printing a highquality layer is determined. This is followed by the finite element method used to simulate and verify the influence of the laser-induced molten pool temperature distribution on the final composition and microstructure. Finally, the high-performance SnTe layer with 10 mm × 10 mm in area is produced within seconds with room temperature Seebeck coefficient close to that of SnTe manufactured by the traditional methods. Consequently,this work lays a solid foundation for the future fabrication of thermoelectric modules using laser non-equilibrium printing techniques.
稀有金属(英文版) 2018,37(04),300-307
Tian-Le Chen Chuang Luo Yong-Gao Yan Ji-Hui Yang Qing-Jie Zhang Ctirad Uher Xin-Feng Tang
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology
Department of Materials Science and Engineering,University of Washington
Department of Physics,University of Michigan
收稿日期:7 December 2017
基金:financially supported by the National Natural Science Foundation of China (Nos. 51401153 and 51772232);the Program of the Ministry of Education of China for Introducing Talents of Discipline to Universities of China (No. B07040);
Tian-Le Chen Chuang Luo Yong-Gao Yan Ji-Hui Yang Qing-Jie Zhang Ctirad Uher Xin-Feng Tang
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology
Department of Materials Science and Engineering,University of Washington
Department of Physics,University of Michigan
Abstract:
Thermoelectric technologies based on Seebeck and Peltier effects,as energy techniques able to directly convert heat into electricity and vice versa, hold promise for addressing the global energy and environmental problems. The development of efficient and low-cost thermoelectric modules is the key to their large-scale commercial applications. In this paper, using a non-equilibrium laser3 D printing technique, we focus an attention on the fabrication of mid-temperature p-type SnTe thermoelectric materials. The influence of laser power, scanning speed and layer thickness on the macro-defects, chemical and phase composition, micro structure and thermoelectric performance was systematically investigated. First and foremost,the processing parameter window for printing a highquality layer is determined. This is followed by the finite element method used to simulate and verify the influence of the laser-induced molten pool temperature distribution on the final composition and microstructure. Finally, the high-performance SnTe layer with 10 mm × 10 mm in area is produced within seconds with room temperature Seebeck coefficient close to that of SnTe manufactured by the traditional methods. Consequently,this work lays a solid foundation for the future fabrication of thermoelectric modules using laser non-equilibrium printing techniques.
Keyword:
Selective laser melting; Laser non-equilibrium heating; SnTe compound; Thermoelectric performance;
Author: Yong-Gao Yan e-mail:yanyonggao@whut.edu.cn;
Received: 7 December 2017
1 Introduction
Thermoelectric (TE) technology,based on Seebeck and Peltier effects,can realize direct conversion between heat and electricity
Unlike traditional subtractive manufacturing,selective laser melting (SLM) is a kind of additive manufacturing technologies
The key step in the SLM-based technique of TE module fabrication is the ability to produce TE legs with good control over their chemical and phase composition,microstructure and TE performance.However,TE materials are usually heavily doped semiconductors,which typically exhibit a much lower thermal conductivity,poor ductility and low thermal shock resistance compared to metals
In this paper,we focus on SnTe,one of the mid-temperature TE materials with promising properties
2 Experimental
Pure elemental powders of Sn(4N) and Te(5N) were weighted according to the stoichiometric ratio of SnTe and mixed in an agate mortar.The mixed powders were coldpressed into a pellet and sealed in a quartz tube under vacuum.The SHS process was ignited by flame heating the bottom of the tube.The reaction zone passed through the ingot in a few seconds,leaving behind a fully reacted single-phase SnTe ingot.The non-spherical SnTe powder with an average particle size (D50) of 7μm was obtained after crushing the ingot by ball milling for a couple of hours.The SnTe powder was blended with alcohol to obtain a slurry
As shown in Fig.1,a customized apparatus was used for SLM experiments,in which SnTe powder-toped substrates were placed inside a gas tight chamber and scanned by a CW YAG-fiber laser via a top viewport of the chamber.The laser's wavelength was 1064 nm with the beam focused to a diameter of 100μm.The fiber laser beam can raster on the powder with the aid of oscillating mirrors along x-and y-axis,which is controlled by a computer.The key SLM parameters include the laser power (P) and the scanning speed (v),which are combined to determine the laser linear energy density (EL),defined
The surface morphology and microstructure of a single track and a layer were examined by field emission scanning electron microscopy (FESEM,SU-8020 Hitachi).The actual chemical composition of the SLM-processed specimens was determined by electron probe microanalysis(EPMA,JXA-8230 m JEOL).The phase identification was performed by X-ray diffractometer (XRD,PANalytical Empyrean) apparatus operating with a Cu Kαradiation at40 kV and 40 mA.The spatially resolved Seebeck coefficient on the layer surface was determined by a potentialSeebeck-microprobe instrument (PSM,Panco) with a spatial resolution of 20μm.
The molten pool temperature distribution during the laser-powder interaction was simulated with the commercially available ABAQUS finite element software package
Fig.1 Schematic diagram illustrating customized apparatus used for SLM experiments
3 Results and discussion
SLM starts from a single point,track and layer and build up to a 3D object.Properties of the final bulk product depend on the quality of every single track and layer;hence,it is necessary to study the formation process of a single track and layer
Table 1 Parameters used in finite element simulation of molten pool temperature
Fig.2 SEM images (top view) of four typical laser-melted SnTe single track with layer thickness of 25μm,scanning speed of 150 mm·s-1 and different laser powers of a P=5 W,b P=15 W,cP=30 W and d P=50 W;SEM images (top view) of four typical SnTe surfaces with layer thickness of 25μm,scanning speed of 400 mm·s-1,hatch spacing of 40μm and laser powers of e P=3 W,f P=5 W,g P=10 W and hP=12 W
Marangoni effect
In order to avoid the defects depicted in Fig.2a-f and obtain single track and layer of the quality shown in Fig.2c,g,the SLM processing parameter window was explored for the single-track and layer formation processes with the powder layer thickness of 25 and 40μm.Figure 3 a,b shows the experimental results of the single-track formation process under different laser powers and scanning speeds.When the powder layer thickness was 40μm,a well-formed single track was obtained for EL varying from 0.200 to 0.500 J·mm-1.Once the laser linear power density EL exceeds 0.500 J·mm-1,the holes caused by vaporization appear and the single track becomes distorted.At the other extreme,as EL decreases below 0.200 J·mm-1,the droplets appear.As EL fell below 0.050 J·mm-1,the full balling process has taken place.As shown in Fig.3b,with the layer thickness decreasing to 25μm,the optimal EL turns out to be between 0.150 and 0.450J·mm-1,consistent with the fact that the required EL to completely melt the powder decreases with the layer thickness decreasing.
Based on the single-track formation process,we explored parameters that affect the layer formation.Figure 3c,d shows the experimental results of layer formation when the layer thickness is 40 and 25μm,respectively.As Fig.3c indicates,there are two notable features regarding how the optimal parameters vary with the formation type and layer thickness.First,at a constant powder layer thickness,the optimal processing window for the layer formation greatly narrows down,compared to the track formation,and the critical laser energy density (EL) shifts to values about 10 times smaller than those for the track formation.This phenomenon is due to the fact that the heat accumulates up and is preserved within the powder bed during the layer formation,instead of dissipating into the substrate as happens during the track formation.This is especially so on thermally resistive TE substrates where the minimal laser energy density to melt the powder is substantially decreased.Second,with the powder layer thickness decreasing from 40 to 25μm,the optimal processing window for the layer formation opens up,showing that a thin powder layer provides more opportunities to vary the SLM parameters.As shown in Fig.3d,the optimal parameter window for the layer formation at the powder layer thickness of 25μm opens up for EL of0.015-0.030 J·mm-1,which is considerably less than the EL range of 0.150-0.450 J·mm-1 required for the track formation.
Fig.3 Single-track formation process results for SnTe with layer thickness of a 40μm and b 25μm,respectively;layer formation process results for SnTe with powder layer thickness of c 40μm and d 25μm
Laser heating during SLM process will influence the chemical composition,phase and microstructure,which are all critical to the performance of TE modules.Figure 4shows the chemical composition,phase and micros true ture of several 5-layer-thick SnTe specimens prepared with EL of 0.014-0.100 J.mm-1.Figure 4a indicates that,compared to the bulk specimen of SnTe produced via SPS,the SLM samples are more Te deficient in their stoichiometry.When EL increased from 0.014 to 0.100 J·mm-1,the atomic ratio of Te to Sn decreases from 0.904 to 0.840.The reason is that the vapor pressure of Te is much higher than that of Sn
During the laser non-equilibrium fabrication of TE materials,the molten pool temperature distribution has a significant influence on the crystal nucleation,the growth progress,the composition and the resulting micros true ture.However,it is difficult to measure the temperature distribution experimentally.Hence,the finite element analysis was used to simulate the molten pool temperature distribution under different EL,as shown in Fig.4c-f.Figure 4c indicates that when EL is 0.100 J·mm-1,the peak molten pool temperature can reach 2441 K,which is far beyond the boiling temperature of SnTe.Consequently,significant evaporation happens and holes on macroscale occur in the formed layer.The simulated molten pool has the length of700μm and the width of 240μm,the area much larger than the laser spot size.This suggests that the high temperature and the large size of the molten pool lead to evaporation of Te,as shown in Fig.4a.As EL decreases from 0.100 to 0.014 J·mm-1,the size of the molten pool gradually diminishes.As shown in Fig.4f,the peak molten pool temperature for EL of 0.014 J·mm-1 is just 1588 K,well below the boiling point of SnTe.The corresponding length and width of the molten pool decrease down to 350and 80μm,respectively.This explains why this sample is less deficient in Te,as Fig.4a suggests.Moreover,when EL is 0.014 J·mm-1,the molten pool cools down at a rate of 2.6×106 K·s-1,according to the simulation results.Such a rate of cooling is of the same order of magnitude as the literature data relevant to simulations of the SLMprocess in metallic materials
Fig.4 Atomic ratio of Te to Sn in SLM-prepared SnTe layers with EL of 0.100,0.050,0.025 and 0.014 J·mm-1 and insets being EDS distribution maps for Te and Sn elements in SLM-prepared SnTe layer with EL of 0.014 J·mm-1;b typical microstructure and inserted XRD pattern of SLM-prepared SnTe layer with EL=0.014 J·mm-1;temperature distribution in molten pool at various EL of c 0.100 J·mm-1,d 0.050 J·mm-1,e 0.025 J·mm-1 and f 0.014 J·mm-1 using finite element analysis method
Figure 5 shows Seebeck coefficient distribution in a thin layer of SnTe prepared by SLM with EL of 0.014 J·s-1-mm-1,and the structure exhibits uniform chemical composition,phase purity and nanostructure features.For comparison,the distribution of Seebeck coefficients in a bulk sample of SnTe consolidated by SPS is also presented in Fig.5.The data suggest that the Seebeck coefficient and its homogeneity in the SLM-prepared SnTe layers are close to those of the SPS-consolidated bulk sample.Specifically,Seebeck coefficients of the SLM-prepared SnTe and the bulk sample sintered by SPS are 28.08 and 29.77μV·K-1,respectively.The corresponding values of full width at half maximum (FWHM) of the Seebeck coefficient distribution function are 3.78 and 4.61μV·K-1,respectively.Thus,while having comparable magnitudes of the Seebeck coefficient,the SLM-prepared material actually shows a better homogeneity than the SnTe specimen prepared by SPS.This attests to the viability of SLM in preparing materials with uniform Seebeck coefficient distributions,even though the process involves an abrupt temperature gradient and large heating and cooling rates.
4 Conclusion
In this paper,it is demonstrated the rapid non-equilibrium laser heating technique as a means of fabricating homogeneous SnTe thermoelectric materials.We systematically studied the influence of the processing parameters (laser power,scanning speed and powder layer thickness) on the quality of the track and layer formation of SnTe,and on the chemical composition,phase purity and micros true ture of the resulting structure.Making use of the finite element analysis,the experimental results are explained by modeling the temperature distribution of the molten pool.The results show that,when the powder layer thickness is set at25μm,the hatch spacing at 40μm and EL at0.014 J mm-1;one can obtain high-quality single-phase SnTe material with uniform composition and nanostructures in just a few seconds using the laser power of 10 W.Most important,the Seebeck coefficient measured on such SLM-fabricated SnTe is very close to that of the bulk SnTe material fabricated via SPS.Moreover,the homogeneity of the Seebeck coefficient distribution in the SLM-fabricated SnTe is even better than that in the SPS-prepared bulk counterpart.The work lays a solid foundation for the fabrication of thermoelectric modules using the laser nonequilibrium heating technique and is likely directly applicable to the fabrication of other thermoelectric materials.
Fig.5 Seebeck coefficient distribution in SLM-prepared SnTe layers and in SPS-consolidated bulk SnTe
参考文献
[1] Snyder GJ,Toberer ES.Complex thermoelectric materials.Nat Mater.2008;7(2):105.
[32] Sharma RC,Chang YA.The Se-Sn(selenium-tin)system.Bull Alloy Phase Diagr.1986;7(1):72.
[33] Dean JA.Lange's handbook of chemistry.Adv Manuf Process.2010;5(4):687.
[37] Suzuki N,Sawai K,Adachi S.Optical properties of PbSe.J Appl Phys.1995;77(3):1249.