Oxidation mechanisms of C-SiC-TaC-C composites prepared bychemical vapor infiltration

来源期刊:中国有色金属学报(英文版)2007年增刊第1期

论文作者:陈招科 熊翔 黄伯云 李国栋 肖鹏 王雅雷 王琼

文章页码:145 - 149

Key words:C/C composites; TaC; chemical vapor infiltration; oxidation-resistance

Abstract: To improve the oxidation-resistance properties, SiC and TaC species were introduced in C/C composites by chemical vapor infiltration (CVI) methods. The oxidation-resistance properties of C-SiC-TaC-C composites were studied by X-Ray diffractometry (XRD), JEOL-6360LV scanning electronic microscopy (SEM) and AdventurerTM electronic balance with precision of 0.1 mg. The results show that, 1) the oxidation rate of the composites increases continuously with time at all experimental temperatures; 2) The oxidation rate increases with temperature within 700-1 100 ℃, slowly in 700-800 ℃, acutely in 800-1 100 ℃; it reaches a maximum value at 1 100 ℃, then decreases within 1 100-1 400 ℃; 3) The relationship curve of oxidation rate with temperature can be divided into three regions. The oxidation rate is controlled by reactivity in region Ⅰ, the mixed effects of reactivity and gas diffusion in region Ⅱ, gas phase diffusion in region Ⅲ; 4) The composites exhibit a higher oxidation onset temperature in low temperature region and a lower oxidation rate at high temperature due to the oxidation of TaC to (Ta, O) and the formation of the dense SiO2-Ta2O5 oxide layer respectively. With the addition of SiC/TaC species, the oxidation-resistant properties of C/C composites can be improved effectively.

基金信息:the National Basic Research Program of China

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