Effects of Mn content on recrystallization resistance of AA6082 aluminum alloys during post-deformation annealing
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG2020年第17期
论文作者：Xiaoming Qian Nick Parson X.-Grant Chen
文章页码：189 - 197
摘 要：The microstructural evolutions under as-homogenized and as-deformed conditions and after the postdeformation annealing of AA6082 aluminum alloys with different Mn content（0.05 wt.%-1 wt.%） were studied by optical, scanning electron, and transmission electron microscopies. The results showed that the presence of a large amount of α-Al（Mn,Fe）Si dispersoids induced by Mn addition significantly improved the recrystallization resistance. In the base alloy free of Mn, static recrystallization occurred after 2 h of annealing, and grain growth commenced after 4 h of annealing, whereas in Mn-containing alloys, the recovered grain structure was well-retained after even 8 h of annealing. The alloy with 0.5% Mn exhibited the best recrystallization resistance, and a further increase of the Mn levels to 1% resulted in a gradual reduction of the recrystallization resistance, the reason for which was that recrystallization occurred only in the dispersoid-free zones（DFZs） and the increased DFZ fraction with Mn content led to an increase in the recrystallization fraction. The variation in the dispersoid number density and a coarsening of dispersoids during annealing have a limited influence on the static recrystallization in Mn-containing alloys.
Xiaoming Qian1，Nick Parson2，X.-Grant Chen1
1. Department of Applied Science, University of Quebec at Chicoutimi2. Arvida Research and Development Centre, Rio Tinto Aluminum
摘 要：The microstructural evolutions under as-homogenized and as-deformed conditions and after the postdeformation annealing of AA6082 aluminum alloys with different Mn content（0.05 wt.%-1 wt.%） were studied by optical, scanning electron, and transmission electron microscopies. The results showed that the presence of a large amount of α-Al（Mn,Fe）Si dispersoids induced by Mn addition significantly improved the recrystallization resistance. In the base alloy free of Mn, static recrystallization occurred after 2 h of annealing, and grain growth commenced after 4 h of annealing, whereas in Mn-containing alloys, the recovered grain structure was well-retained after even 8 h of annealing. The alloy with 0.5% Mn exhibited the best recrystallization resistance, and a further increase of the Mn levels to 1% resulted in a gradual reduction of the recrystallization resistance, the reason for which was that recrystallization occurred only in the dispersoid-free zones（DFZs） and the increased DFZ fraction with Mn content led to an increase in the recrystallization fraction. The variation in the dispersoid number density and a coarsening of dispersoids during annealing have a limited influence on the static recrystallization in Mn-containing alloys.
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