Electrochemical behavior and polishing properties of silicon wafer in alkaline slurry with abrasive CeO2

来源期刊:中国有色金属学报(英文版)2008年第1期

论文作者:宋晓岚 徐大余 张晓伟 史训达 江楠 邱冠周

文章页码:178 - 182

Key words:Chemical mechanical polishing(CMP); material removal rate(MRR); electrochemical characteristics; slurry; abrasive CeO2

Abstract: The electrochemical behavior of silicon wafer in alkaline slurry with nano-sized CeO2 abrasive was investigated. The variations of corrosion potential (φcorr) and corrosion current density (Jcorr) of the P-type (100) silicon wafer with the slurry pH value and the concentration of abrasive CeO2 were studied by polarization curve technologies. The dependence of the polishing rate on the pH and the concentration of CeO2 in slurries during chemical mechanical polishing(CMP) were also studied. It is discovered that there is a large change of φcorr and Jcorr when slurry pH is altered and the Jcorr reaches the maximum (1.306 μA/cm2) at pH 10.5 when the material removal rate(MRR) comes to the fastest value. The Jcorr increases gradually from 0.994 μA/cm2 with 1% CeO2 to 1.304 μA/cm2 with 3% CeO2 and reaches a plateau with the further increase of CeO2 concentration. There is a considerable MRR in the slurry with 3% CeO2 at pH 10.5. The coherence between Jcorr and MRR elucidates that the research on the electrochemical behavior of silicon wafers in the alkaline slurry could offer theoretic guidance on silicon polishing rate and ensure to adjust optimal components of slurry.

基金信息:the International Cooperation of Science and Technology Ministry of China
the National Undergraduate Innovative Experiment Plan

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