n-type Polycrystalhne Si Thick Films Deposited on SiNx-coated Metallurgical Grade Si Substrates
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG2015年第1期
论文作者：Hongliang Zhang Liqiang Zhu Liqiang Zhu Yanghui Liu Qing Wan
文章页码：65 - 69
摘 要：For photovoltaic applications,low-cost SiNx-coated metallurgical grade silicon（MG-Si） wafers were used as substrates for polycrystalline silicon（poly-Si） thick films deposition at temperatures ranging from 640 to880 ℃ by thermal chemical vapor deposition.X-ray diffraction and Raman results indicated that high-quality poly-Si thick films were deposited at 880 ℃.To obtain n-type poly-Si,the as-deposited poly-Si films were annealed at 880 ℃ capped with a phosphosilicate glass.Electrical properties of the n-type poly-Si thick films were investigated by four-probe and Hall measurements.The carrier concentration and electron mobility of the n-type poly-Si film was estimated to be 1.7 x 1019 cm-3 and 68.1 cm2 V-1 s-1,respectively.Highquality poly-Si thick films deposited on MG-Si wafers are very promising for photovoltaic applications.
Hongliang Zhang，Liqiang Zhu，Liqiang Guo，Yanghui Liu，Qing Wan
Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences
摘 要：For photovoltaic applications,low-cost SiNx-coated metallurgical grade silicon（MG-Si） wafers were used as substrates for polycrystalline silicon（poly-Si） thick films deposition at temperatures ranging from 640 to880 ℃ by thermal chemical vapor deposition.X-ray diffraction and Raman results indicated that high-quality poly-Si thick films were deposited at 880 ℃.To obtain n-type poly-Si,the as-deposited poly-Si films were annealed at 880 ℃ capped with a phosphosilicate glass.Electrical properties of the n-type poly-Si thick films were investigated by four-probe and Hall measurements.The carrier concentration and electron mobility of the n-type poly-Si film was estimated to be 1.7 x 1019 cm-3 and 68.1 cm2 V-1 s-1,respectively.Highquality poly-Si thick films deposited on MG-Si wafers are very promising for photovoltaic applications.
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