InP Bulk Crystals Grown from Various Stoichiometric Melt
来源期刊：JOURNAL OF RARE EARTHS2006年增刊第1期
论文作者：Sun Tongnian Zhao Zhengping Sun Niefeng Zhou Xiaolong Wu Xiang Mao Luhong
Key words：indium phosphide; phosphorus-rich; photoluminescence mapping; etch-pit density;
Abstract: InP crystal was grown from stoichiometric or non-stoichiometric melt, including P-rich and In-rich condition by the P-injection synthesis LEC method. Owing to the non-stoichiometric condition, there are many pores in the tail of the P-rich ingot. Samples were characterized by high speed photoluminescence mapping and E.P.D. mapping. The perfection (dislocation, stoichiometry and uniformity) of these samples were studied and compared. The PL peak intensity standard deviation of the 4-inch InP wafer is higher. The EPDs around the pores are higher than the other regions. Besides the stress releasing, the pores and the high concentration of dislocations around them are the leading factors causing the inhomogeneity of the wafer. By adjusting the thermal field and ensuring the chemical stoichiometry, InP crystals of larger diameters and better performance can be developed.
Sun Tongnian1，Zhao Zhengping2，Sun Niefeng3，Zhou Xiaolong1，Wu Xiang2，Mao Luhong3
(1.National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
2.China Electronic Technology Group Corporation, Beijing 100846, China;
3.School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China)
Abstract:InP crystal was grown from stoichiometric or non-stoichiometric melt, including P-rich and In-rich condition by the P-injection synthesis LEC method. Owing to the non-stoichiometric condition, there are many pores in the tail of the P-rich ingot. Samples were characterized by high speed photoluminescence mapping and E.P.D. mapping. The perfection (dislocation, stoichiometry and uniformity) of these samples were studied and compared. The PL peak intensity standard deviation of the 4-inch InP wafer is higher. The EPDs around the pores are higher than the other regions. Besides the stress releasing, the pores and the high concentration of dislocations around them are the leading factors causing the inhomogeneity of the wafer. By adjusting the thermal field and ensuring the chemical stoichiometry, InP crystals of larger diameters and better performance can be developed.
Key words:indium phosphide; phosphorus-rich; photoluminescence mapping; etch-pit density;
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