工艺参数对电子浴辅助阴极电弧源法合成AlN薄膜的影响
来源期刊：中国有色金属学报2001年第2期
论文作者：潘俊德 田林海 莘海维 贺琦
文章页码：240 - 243
关键词：阴极电弧源法； AlN薄膜； 电子浴
Key words：cathode arc source；aluminum nitride thin film; electrons bath
摘 要：介绍了一种应用电子浴辅助阴极电弧源法合成AlN薄膜的新方法，研究了N2流量、阴极偏压、工作气压等工艺参数对合成AlN薄膜质量的影响规律。结果表明，随N2流量的增加，AlN薄膜的质量得以提高，当N2流量达到30 mL·min-１时，可合成较纯净的AlN薄膜；阴极偏压主要影响合成薄膜的结晶状况；此外，基体材料本身及其表面状况也对合成薄膜的质量有一定影响。
Abstract: A new synthesizing aluminum nitride thin film method, which uses activated active ion plating with cathode arc source assisted by electrons bath, was introduced. The effect law of process parameters (including nitrogen flow rate, substrate bias potential, gas pressure etc.) on the quality of synthesized aluminum nitride was investigated. The results show that the quality of AlN thin films are improved with the increase of N2 flow rate. When N2 flow rate reaches to 30 mL·min-１，comparatively pure AlN thin film is synthesized. The cathode bias potential mainly affects the crystallinity of the films. In addition， substrate material and its surface state also have some effects on the films.
