W-Cu电子封装材料的气密性

来源期刊：中国有色金属学报1999年第2期

论文作者：王志法 刘正春 姜国圣

文章页码：323 - 326

关键词：W-Cu合金 电子封装材料 气密性 诱导铜

Key words：W-Cu composite ; hermeticity ;inducing copper ;infiltration

摘    要：分析了传统熔渗法生产的W-Cu材料气密性差的工艺因素，采用加入一定数量的诱导铜的工艺方法进行压型，通过调整成型压力，使生坯中的W含量达到电子封装W-Cu15含钨量的标准，其余的Cu在熔渗时渗入。实验表明，加入1%～2 .5%的诱导铜的生坯在1350℃熔渗1.5h，其气密性可以达到满意的效果

Abstract: The factors resulting in inferior hermeticity of W-Cu composites made by conventional process were analyzed and then a new process was introduced. Firstly, a small amount of inducing copper powder was mixed with the W powder. Then the mixed powder was directly pressed into green compacts of required density. Finally the balance of the copper was added by infiltrati ng method. It is indicated that when the compact contains 1%～2.5%(mass fraction ) inducing copper and is infiltrated at 1 350℃ for 1.5h, the hermeticity of the material is fairly satisfactory.